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APT25GN120BG Microchip Technology
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details APT25GN120BG Microchip Technology
Description: IGBT 1200V 67A 272W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Supplier Device Package: TO-247 [B], IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 22ns/280ns, Switching Energy: 2.15µJ (off), Test Condition: 800V, 25A, 1Ohm, 15V, Gate Charge: 155 nC, Current - Collector (Ic) (Max): 67 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 272 W.
Weitere Produktangebote APT25GN120BG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APT25GN120BG | Hersteller : Microchip Technology |
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auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
![]() |
APT25GN120BG | Hersteller : Microchip Technology |
![]() |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
![]() |
APT25GN120BG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; Field Stop; 1.2kV; 33A; 272W; TO247-3 Case: TO247-3 Power dissipation: 272W Technology: Field Stop Gate charge: 155nC Kind of package: tube Collector current: 33A Type of transistor: IGBT Turn-on time: 39ns Turn-off time: 560ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 75A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
APT25GN120BG | Hersteller : MICROSEMI |
![]() Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
![]() |
APT25GN120BG | Hersteller : Microchip Technology |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-247 [B] IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/280ns Switching Energy: 2.15µJ (off) Test Condition: 800V, 25A, 1Ohm, 15V Gate Charge: 155 nC Current - Collector (Ic) (Max): 67 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 272 W |
Produkt ist nicht verfügbar |
|
APT25GN120BG | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |
||
![]() |
APT25GN120BG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; Field Stop; 1.2kV; 33A; 272W; TO247-3 Case: TO247-3 Power dissipation: 272W Technology: Field Stop Gate charge: 155nC Kind of package: tube Collector current: 33A Type of transistor: IGBT Turn-on time: 39ns Turn-off time: 560ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 75A |
Produkt ist nicht verfügbar |