APT20GN60SDQ2G Microchip Technology
Hersteller: Microchip Technology
Description: IGBT FIELDSTOP COMBI 600V 20A TO
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: D3Pak
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/140ns
Switching Energy: 230µJ (on), 580µJ (off)
Test Condition: 400V, 20A, 4.3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
Description: IGBT FIELDSTOP COMBI 600V 20A TO
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: D3Pak
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/140ns
Switching Energy: 230µJ (on), 580µJ (off)
Test Condition: 400V, 20A, 4.3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 11.37 EUR |
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Technische Details APT20GN60SDQ2G Microchip Technology
Description: IGBT FIELDSTOP COMBI 600V 20A TO, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 30 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A, Supplier Device Package: D3Pak, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 9ns/140ns, Switching Energy: 230µJ (on), 580µJ (off), Test Condition: 400V, 20A, 4.3Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 136 W.
Weitere Produktangebote APT20GN60SDQ2G
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Verfügbarkeit |
Preis ohne MwSt |
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APT20GN60SDQ2G | Hersteller : Microchip Technology | Trans IGBT Chip N-CH 600V 40A 136000mW 3-Pin(2+Tab) D3PAK Tube |
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APT20GN60SDQ2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; D3PAK Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: SMD Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT20GN60SDQ2G | Hersteller : Microchip Technology | IGBTs IGBT Fieldstop Low Frequency Combi 600 V 20 A TO-268 |
Produkt ist nicht verfügbar |
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APT20GN60SDQ2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; D3PAK Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: SMD Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |