APT200GN60B2G Microchip Technology
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 40.53 EUR |
100+ | 35.01 EUR |
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Technische Details APT200GN60B2G Microchip Technology
Description: IGBT 600V 283A 682W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 200A, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 50ns/560ns, Switching Energy: 13mJ (on), 11mJ (off), Test Condition: 400V, 200A, 1Ohm, 15V, Gate Charge: 1180 nC, Current - Collector (Ic) (Max): 283 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 600 A, Power - Max: 682 W.
Weitere Produktangebote APT200GN60B2G
Foto | Bezeichnung | Hersteller | Beschreibung |
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APT200GN60B2G | Hersteller : Microchip Technology | Trans IGBT Chip N-CH 600V 283A 682000mW 3-Pin(3+Tab) T-MAX Tube |
Produkt ist nicht verfügbar |
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APT200GN60B2G | Hersteller : Microchip Technology | Trans IGBT Chip N-CH 600V 283A 682W 3-Pin(3+Tab) T-MAX Tube |
Produkt ist nicht verfügbar |
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APT200GN60B2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 158A; 682W; T-Max Type of transistor: IGBT Collector current: 158A Case: T-Max Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 600A Turn-on time: 130ns Turn-off time: 690ns Collector-emitter voltage: 600V Power dissipation: 682W Technology: Field Stop Kind of package: tube Gate charge: 1180nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT200GN60B2G | Hersteller : Microchip Technology |
Description: IGBT 600V 283A 682W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 200A IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 50ns/560ns Switching Energy: 13mJ (on), 11mJ (off) Test Condition: 400V, 200A, 1Ohm, 15V Gate Charge: 1180 nC Current - Collector (Ic) (Max): 283 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 600 A Power - Max: 682 W |
Produkt ist nicht verfügbar |
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APT200GN60B2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 158A; 682W; T-Max Type of transistor: IGBT Collector current: 158A Case: T-Max Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 600A Turn-on time: 130ns Turn-off time: 690ns Collector-emitter voltage: 600V Power dissipation: 682W Technology: Field Stop Kind of package: tube Gate charge: 1180nC |
Produkt ist nicht verfügbar |