APT18M100B Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 1000V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 9A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4845 pF @ 25 V
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 15.47 EUR |
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Technische Details APT18M100B Microchip Technology
Description: MOSFET N-CH 1000V 18A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 700mOhm @ 9A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4845 pF @ 25 V.
Weitere Produktangebote APT18M100B nach Preis ab 13.46 EUR bis 15.58 EUR
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APT18M100B | Hersteller : Microchip Technology |
MOSFET MOSFET MOS8 1000 V 18 A TO-247 |
auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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APT18M100B | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 1KV 18A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT18M100B | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 1KV 18A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT18M100B | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 68A; 625W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 68A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.7Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT18M100B | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 68A; 625W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 68A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.7Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |