Technische Details APT17F120J Microsemi
Category: Transistor modules MOSFET, Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A, Type of module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 1.2kV, Drain current: 12A, Case: ISOTOP, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 0.58Ω, Pulsed drain current: 104A, Power dissipation: 545W, Technology: POWER MOS 8®, Kind of channel: enhanced, Gate-source voltage: ±30V, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT17F120J
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
APT17F120J | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 12A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.58Ω Pulsed drain current: 104A Power dissipation: 545W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
APT17F120J | Hersteller : Microsemi Corporation | Description: MOSFET N-CH 1200V 18A SOT-227 |
Produkt ist nicht verfügbar |
||
APT17F120J | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 12A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.58Ω Pulsed drain current: 104A Power dissipation: 545W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |