AOV11S60 ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET N-CH 600V 650MA/8A 4DFN, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 8A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 3.8A, 10V, Power Dissipation (Max): 8.3W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 4.1V @ 250µA, Supplier Device Package: 4-DFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V.