AOU2N60 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 9.5nC
Kind of channel: enhanced
auf Bestellung 3843 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 135+ | 0.53 EUR |
| 157+ | 0.46 EUR |
| 180+ | 0.4 EUR |
| 191+ | 0.38 EUR |
| 2000+ | 0.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AOU2N60 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 600V 2A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V, Power Dissipation (Max): 56.8W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-251-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V.
Weitere Produktangebote AOU2N60 nach Preis ab 0.37 EUR bis 1.47 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
AOU2N60 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Case: TO251 Gate-source voltage: ±30V On-state resistance: 4.4Ω Mounting: THT Gate charge: 9.5nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3843 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
| AOU2N60 | Hersteller : ALPHA&OMEGA |
Transistor N-Channel MOSFET; 600V; 30V; 4,4Ohm; 2A; 56,8W; -50°C ~ 150°C; AOU2N60 TAOU2n60 Anzahl je Verpackung: 20 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| AOU2N60 | Hersteller : ALPHA&OMEGA |
Transistor N-Channel MOSFET; 600V; 30V; 4,4Ohm; 2A; 56,8W; -50°C ~ 150°C; AOU2N60 TAOU2n60 Anzahl je Verpackung: 20 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
 |
AOU2N60 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-251 |
Produkt ist nicht verfügbar |
|||||||||||||
 |
AOU2N60 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-251 |
Produkt ist nicht verfügbar |
|||||||||||||
 |
AOU2N60 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 2A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V |
Produkt ist nicht verfügbar |