![AOTS21115C AOTS21115C](https://ce8dc832c.cloudimg.io/v7/_cdn_/CB/46/E0/00/0/943292_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=f046b012f13e6edd3f7e161d43025ed85be04b94)
AOTS21115C ALPHA & OMEGA SEMICONDUCTOR
![AOTS21115C.pdf](/images/adobe-acrobat.png)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 20V; 6.6A; 2.5W; TSOP6
Mounting: SMD
Gate charge: 17nC
Case: TSOP6
Kind of channel: enhanced
Gate-source voltage: ±8V
Polarisation: unipolar
Power dissipation: 2.5W
Type of transistor: P-MOSFET
On-state resistance: 40mΩ
Drain current: 6.6A
Drain-source voltage: 20V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1565 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
380+ | 0.19 EUR |
550+ | 0.13 EUR |
620+ | 0.12 EUR |
680+ | 0.11 EUR |
715+ | 0.1 EUR |
3000+ | 0.097 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AOTS21115C ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET P-CH 20V 6.6A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 6.6A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V.
Weitere Produktangebote AOTS21115C nach Preis ab 0.1 EUR bis 0.7 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
AOTS21115C | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; 20V; 6.6A; 2.5W; TSOP6 Mounting: SMD Gate charge: 17nC Case: TSOP6 Kind of channel: enhanced Gate-source voltage: ±8V Polarisation: unipolar Power dissipation: 2.5W Type of transistor: P-MOSFET On-state resistance: 40mΩ Drain current: 6.6A Drain-source voltage: 20V |
auf Bestellung 1565 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
AOTS21115C | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 6.6A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
AOTS21115C | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 6.6A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V |
auf Bestellung 7814 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
AOTS21115C | Hersteller : Alpha & Omega Semiconductor |
![]() |
Produkt ist nicht verfügbar |