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AOTF9N50 ALPHA & OMEGA SEMICONDUCTOR
![TO220F.pdf](/images/adobe-acrobat.png)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 23.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 829 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
53+ | 1.37 EUR |
75+ | 0.96 EUR |
84+ | 0.86 EUR |
88+ | 0.81 EUR |
100+ | 0.8 EUR |
500+ | 0.78 EUR |
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Technische Details AOTF9N50 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 500V 9A TO220-3F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V, Power Dissipation (Max): 38.5W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220F, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V.
Weitere Produktangebote AOTF9N50 nach Preis ab 0.78 EUR bis 1.37 EUR
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AOTF9N50 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 6A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6A Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 23.6nC Kind of channel: enhanced |
auf Bestellung 829 Stücke: Lieferzeit 14-21 Tag (e) |
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AOTF9N50 | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AOTF9N50 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V Power Dissipation (Max): 38.5W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V |
Produkt ist nicht verfügbar |