Weitere Produktangebote AOTF8N65
Foto | Bezeichnung | Hersteller | Beschreibung |
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AOTF8N65 | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AOTF8N65 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5.2A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.2A Case: TO220F Gate-source voltage: ±30V On-state resistance: 1.15Ω Mounting: THT Gate charge: 23.5nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AOTF8N65 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.15Ohm @ 4A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
Produkt ist nicht verfügbar |
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AOTF8N65 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5.2A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.2A Case: TO220F Gate-source voltage: ±30V On-state resistance: 1.15Ω Mounting: THT Gate charge: 23.5nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |