![AOTF7N60FD AOTF7N60FD](https://ce8dc832c.cloudimg.io/v7/_cdn_/A1/8E/00/00/0/59418_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=263cfba794860b61634ab5d386e1ae684a34b3d1)
AOTF7N60FD ALPHA & OMEGA SEMICONDUCTOR
![AOTF7N60FD-DTE.pdf](/images/adobe-acrobat.png)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.7A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.7A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Gate charge: 20nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 156 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
75+ | 0.96 EUR |
83+ | 0.87 EUR |
93+ | 0.78 EUR |
108+ | 0.67 EUR |
114+ | 0.63 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AOTF7N60FD ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 600V 7A TO220-3F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 1.45Ohm @ 3.5A, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 250µA, Supplier Device Package: TO-220F, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 25 V.
Weitere Produktangebote AOTF7N60FD nach Preis ab 0.63 EUR bis 0.96 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
AOTF7N60FD | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 4.7A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.7A Case: TO220F Gate-source voltage: ±30V On-state resistance: 1.45Ω Mounting: THT Gate charge: 20nC Kind of channel: enhanced |
auf Bestellung 156 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
AOTF7N60FD Produktcode: 166194 |
![]() |
Produkt ist nicht verfügbar
|
|||||||||||||||
![]() |
AOTF7N60FD | Hersteller : Alpha & Omega Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
AOTF7N60FD | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 3.5A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 25 V |
Produkt ist nicht verfügbar |