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AOTF2606L Alpha & Omega Semiconductor
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Technische Details AOTF2606L Alpha & Omega Semiconductor
Description: MOSFET N-CH 60V 13A/54A TO220-3F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 54A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 36.5W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 30 V.
Weitere Produktangebote AOTF2606L
Foto | Bezeichnung | Hersteller | Beschreibung |
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AOTF2606L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 38A; 18W; TO220F Case: TO220F Mounting: THT Drain current: 38A On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Power dissipation: 18W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AOTF2606L | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 36.5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 30 V |
Produkt ist nicht verfügbar |
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![]() |
AOTF2606L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 38A; 18W; TO220F Case: TO220F Mounting: THT Drain current: 38A On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Power dissipation: 18W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V |
Produkt ist nicht verfügbar |