AOT482L ALPHA & OMEGA SEMICONDUCTOR
auf Bestellung 465 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 38+ | 1.89 EUR |
| 53+ | 1.37 EUR |
| 55+ | 1.3 EUR |
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Technische Details AOT482L ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 80V 11A/105A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 105A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 40 V.
Weitere Produktangebote AOT482L
| Foto | Bezeichnung | Hersteller | Beschreibung |
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AOT482L | Hersteller : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 80V 105A 3-Pin(3+Tab) TO-220 T/R |
Produkt ist nicht verfügbar |
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AOT482L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 80V 11A/105A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 40 V |
Produkt ist nicht verfügbar |