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AOT264L ALPHA & OMEGA SEMICONDUCTOR
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Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 167W; TO220
Mounting: THT
Case: TO220
Power dissipation: 167W
Drain-source voltage: 60V
Drain current: 110A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 78nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1000 Stücke
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Technische Details AOT264L ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 60V 19A/140A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 140A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V.
Weitere Produktangebote AOT264L
Foto | Bezeichnung | Hersteller | Beschreibung |
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AOT264L | Hersteller : Alpha & Omega Semiconductor |
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AOT264L | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V |
Produkt ist nicht verfügbar |
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AOT264L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 167W; TO220 Mounting: THT Case: TO220 Power dissipation: 167W Drain-source voltage: 60V Drain current: 110A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 78nC Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |