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AOT20N25L Alpha & Omega Semiconductor
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Technische Details AOT20N25L Alpha & Omega Semiconductor
Description: MOSFET N-CH 250V 20A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1028 pF @ 25 V.
Weitere Produktangebote AOT20N25L
Foto | Bezeichnung | Hersteller | Beschreibung |
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AOT20N25L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 14A; 208W; TO220 Mounting: THT On-state resistance: 0.17Ω Type of transistor: N-MOSFET Case: TO220 Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±30V Power dissipation: 208W Drain-source voltage: 250V Drain current: 14A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AOT20N25L | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1028 pF @ 25 V |
Produkt ist nicht verfügbar |
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![]() |
AOT20N25L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 14A; 208W; TO220 Mounting: THT On-state resistance: 0.17Ω Type of transistor: N-MOSFET Case: TO220 Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±30V Power dissipation: 208W Drain-source voltage: 250V Drain current: 14A |
Produkt ist nicht verfügbar |