AOSP32314 Alpha & Omega Semiconductor Inc.
auf Bestellung 929 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 1.18 EUR |
| 17+ | 1.04 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.63 EUR |
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Technische Details AOSP32314 Alpha & Omega Semiconductor Inc.
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 11.5A, Power dissipation: 2W, Case: SO8, Gate-source voltage: ±20V, On-state resistance: 9mΩ, Mounting: SMD, Gate charge: 10nC, Kind of channel: enhanced.
Weitere Produktangebote AOSP32314
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AOSP32314 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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AOSP32314 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 14.5A 8SOIC |
Produkt ist nicht verfügbar |
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AOSP32314 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |