AONS66612T Alpha & Omega Semiconductor Inc.


AONS66612T.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: 60V N-CHANNEL ALPHASGT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+2.46 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details AONS66612T Alpha & Omega Semiconductor Inc.

Description: 60V N-CHANNEL ALPHASGT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V, Power Dissipation (Max): 7.5W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V.

Weitere Produktangebote AONS66612T nach Preis ab 2.62 EUR bis 5.05 EUR

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Preis ohne MwSt
AONS66612T Hersteller : Alpha & Omega Semiconductor Inc. AONS66612T.pdf Description: 60V N-CHANNEL ALPHASGT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
auf Bestellung 5951 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.05 EUR
10+ 4.25 EUR
100+ 3.44 EUR
500+ 3.06 EUR
1000+ 2.62 EUR
Mindestbestellmenge: 4
AONS66612T Hersteller : Alpha & Omega Semiconductor aons66612t.pdf N Channel Trench Power MOSFET
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