AONS66612

AONS66612 Alpha & Omega Semiconductor Inc.


AONS66612.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 46A/100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+2.28 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details AONS66612 Alpha & Omega Semiconductor Inc.

Description: MOSFET N-CH 60V 46A/100A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 208W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V.

Weitere Produktangebote AONS66612 nach Preis ab 2.42 EUR bis 4.7 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
AONS66612 AONS66612 Hersteller : Alpha & Omega Semiconductor Inc. AONS66612.pdf Description: MOSFET N-CH 60V 46A/100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
auf Bestellung 4606 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.7 EUR
10+ 3.94 EUR
100+ 3.18 EUR
500+ 2.83 EUR
1000+ 2.42 EUR
Mindestbestellmenge: 4
AONS66612 AONS66612 Hersteller : Alpha & Omega Semiconductor aons66612.pdf Trans MOSFET N-CH 60V 100A 8-Pin DFN EP T/R
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AONS66612 Hersteller : ALPHA & OMEGA SEMICONDUCTOR AONS66612.pdf AONS66612 SMD N channel transistors
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AONS66612 AONS66612 Hersteller : Alpha & Omega Semiconductor aons66612.pdf Trans MOSFET N-CH 60V 100A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
AONS66612 AONS66612 Hersteller : Alpha & Omega Semiconductor aons66612.pdf Trans MOSFET N-CH 60V 100A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar