AONS62614T Alpha & Omega Semiconductor
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details AONS62614T Alpha & Omega Semiconductor
Description: MOSFET N-CH 60V 39A/100A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V, Power Dissipation (Max): 7.5W (Ta), 142W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 30 V.
Weitere Produktangebote AONS62614T
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
AONS62614T | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; AlphaSGT™; unipolar; 60V; 39A; 7.5W; DFN8 Type of transistor: N-MOSFET Technology: AlphaSGT™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 39A Power dissipation: 7.5W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 90nC Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
|
 |
AONS62614T | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 39A/100A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 142W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 30 V |
Produkt ist nicht verfügbar |
|
|
|
AONS62614T | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 39A/100A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 142W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 30 V |
Produkt ist nicht verfügbar |
|
|
|
AONS62614T | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 60V; 39A; 7.5W; DFN8 Type of transistor: N-MOSFET Technology: AlphaSGT™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 39A Power dissipation: 7.5W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 90nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |