Produkte > ALPHA & OMEGA SEMICONDUCTOR INC. > AONS1R6A70

AONS1R6A70 Alpha & Omega Semiconductor Inc.

AONS1R1A70.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 1.1A/4.6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Power Dissipation (Max): 4.1W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 100 V
auf Bestellung 2507 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.11 EUR
11+ 1.72 EUR
100+ 1.34 EUR
500+ 1.14 EUR
1000+ 0.93 EUR
Mindestbestellmenge: 9
Produktrezensionen
Produktbewertung abgeben

Technische Details AONS1R6A70 Alpha & Omega Semiconductor Inc.

Description: MOSFET N-CH 700V 1.1A/4.6A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 4.6A (Tc), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V, Power Dissipation (Max): 4.1W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 8-DFN-EP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 100 V.

Weitere Produktangebote AONS1R6A70 nach Preis ab 6.77 EUR bis 6.77 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
AONS1R6A70 Hersteller : ALPHA&OMEGA AONS1R1A70.pdf 700V, A MOS TM N-CHANNEL POWER T AONS1R6A70 TAONS1R6A70
Anzahl je Verpackung: 2 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
6+6.77 EUR
Mindestbestellmenge: 6
AONS1R6A70 Hersteller : Alpha & Omega Semiconductor aons1r6a70.pdf N Channel Power Transistor
Produkt ist nicht verfügbar
AONS1R6A70 Hersteller : Alpha & Omega Semiconductor Inc. AONS1R1A70.pdf Description: MOSFET N-CH 700V 1.1A/4.6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Power Dissipation (Max): 4.1W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 100 V
Produkt ist nicht verfügbar