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AON7522E Alpha & Omega Semiconductor
auf Bestellung 8078 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
297+ | 0.52 EUR |
384+ | 0.38 EUR |
387+ | 0.37 EUR |
500+ | 0.29 EUR |
1000+ | 0.24 EUR |
3000+ | 0.22 EUR |
6000+ | 0.2 EUR |
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Technische Details AON7522E Alpha & Omega Semiconductor
Description: MOSFET N-CH 30V 21A/34A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 15 V.
Weitere Produktangebote AON7522E nach Preis ab 0.2 EUR bis 1.36 EUR
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AON7522E | Hersteller : Alpha & Omega Semiconductor |
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auf Bestellung 8078 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7522E | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 15 V |
auf Bestellung 339 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7522E | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AON7522E | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AON7522E | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 12W; DFN3x3 EP Mounting: SMD Case: DFN3x3 EP Power dissipation: 12W Type of transistor: N-MOSFET Gate charge: 19.7nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 4mΩ Drain current: 27A Drain-source voltage: 30V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AON7522E | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 15 V |
Produkt ist nicht verfügbar |
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AON7522E | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 12W; DFN3x3 EP Mounting: SMD Case: DFN3x3 EP Power dissipation: 12W Type of transistor: N-MOSFET Gate charge: 19.7nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 4mΩ Drain current: 27A Drain-source voltage: 30V Polarisation: unipolar |
Produkt ist nicht verfügbar |