AON7522E

AON7522E Alpha & Omega Semiconductor


aon7522e.pdf Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 34A 8-Pin DFN-A EP
auf Bestellung 8078 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
297+0.52 EUR
384+ 0.38 EUR
387+ 0.37 EUR
500+ 0.29 EUR
1000+ 0.24 EUR
3000+ 0.22 EUR
6000+ 0.2 EUR
Mindestbestellmenge: 297
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Technische Details AON7522E Alpha & Omega Semiconductor

Description: MOSFET N-CH 30V 21A/34A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 15 V.

Weitere Produktangebote AON7522E nach Preis ab 0.2 EUR bis 1.36 EUR

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Preis ohne MwSt
AON7522E AON7522E Hersteller : Alpha & Omega Semiconductor aon7522e.pdf Trans MOSFET N-CH 30V 34A 8-Pin DFN-A EP
auf Bestellung 8078 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
236+0.65 EUR
295+ 0.5 EUR
297+ 0.48 EUR
384+ 0.36 EUR
387+ 0.34 EUR
500+ 0.27 EUR
1000+ 0.22 EUR
3000+ 0.21 EUR
6000+ 0.2 EUR
Mindestbestellmenge: 236
AON7522E AON7522E Hersteller : Alpha & Omega Semiconductor Inc. AON7522E.pdf Description: MOSFET N-CH 30V 21A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 15 V
auf Bestellung 339 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.36 EUR
21+ 0.85 EUR
100+ 0.55 EUR
Mindestbestellmenge: 13
AON7522E AON7522E Hersteller : Alpha & Omega Semiconductor aon7522e.pdf Trans MOSFET N-CH 30V 34A 8-Pin DFN-A EP
Produkt ist nicht verfügbar
AON7522E AON7522E Hersteller : Alpha & Omega Semiconductor aon7522e.pdf Trans MOSFET N-CH 30V 34A 8-Pin DFN-A EP
Produkt ist nicht verfügbar
AON7522E AON7522E Hersteller : ALPHA & OMEGA SEMICONDUCTOR AON7522E-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 12W; DFN3x3 EP
Mounting: SMD
Case: DFN3x3 EP
Power dissipation: 12W
Type of transistor: N-MOSFET
Gate charge: 19.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Drain current: 27A
Drain-source voltage: 30V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AON7522E AON7522E Hersteller : Alpha & Omega Semiconductor Inc. AON7522E.pdf Description: MOSFET N-CH 30V 21A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 15 V
Produkt ist nicht verfügbar
AON7522E AON7522E Hersteller : ALPHA & OMEGA SEMICONDUCTOR AON7522E-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 12W; DFN3x3 EP
Mounting: SMD
Case: DFN3x3 EP
Power dissipation: 12W
Type of transistor: N-MOSFET
Gate charge: 19.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Drain current: 27A
Drain-source voltage: 30V
Polarisation: unipolar
Produkt ist nicht verfügbar