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AON7296 ALPHA & OMEGA SEMICONDUCTOR
![AON7296-DTE.pdf](/images/adobe-acrobat.png)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 8.3W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8A
Power dissipation: 8.3W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 3nC
Kind of channel: enhanced
auf Bestellung 2775 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
221+ | 0.32 EUR |
307+ | 0.23 EUR |
368+ | 0.19 EUR |
388+ | 0.18 EUR |
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Technische Details AON7296 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 100V 5A/12.5A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc), Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V, Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V.
Weitere Produktangebote AON7296 nach Preis ab 0.18 EUR bis 0.99 EUR
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AON7296 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 8.3W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 8A Power dissipation: 8.3W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 66mΩ Mounting: SMD Gate charge: 3nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2775 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7296 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V |
auf Bestellung 95000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7296 | Hersteller : Alpha & Omega Semiconductor |
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auf Bestellung 2033 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7296 | Hersteller : Alpha & Omega Semiconductor |
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auf Bestellung 2033 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7296 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V |
auf Bestellung 103070 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7296 | Hersteller : ALPHA&OMEGA |
![]() Anzahl je Verpackung: 50 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7296 | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AON7296 | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |