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AON7232 Alpha & Omega Semiconductor
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Technische Details AON7232 Alpha & Omega Semiconductor
Description: MOSFET N-CHANNEL 100V 37A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 12A, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFN-EP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 50 V.
Weitere Produktangebote AON7232
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AON7232 | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AON7232 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 15.5W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Power dissipation: 15.5W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 12nC Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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AON7232 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 12A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 50 V |
Produkt ist nicht verfügbar |
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AON7232 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 15.5W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Power dissipation: 15.5W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 12nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |