AON6998 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54A; 8/13W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/54A
Power dissipation: 8/13W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.2/2.6mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
auf Bestellung 2622 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 72+ | 1 EUR |
| 84+ | 0.86 EUR |
| 93+ | 0.77 EUR |
| 100+ | 0.72 EUR |
| 107+ | 0.67 EUR |
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Technische Details AON6998 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET 2N-CH 30V 19A/26A DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 19A, 26A, Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Not For New Designs.
Weitere Produktangebote AON6998 nach Preis ab 0.67 EUR bis 1 EUR
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AON6998 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54A; 8/13W; DFN5x6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 31/54A Power dissipation: 8/13W Case: DFN5x6 Gate-source voltage: ±12V; ±20V On-state resistance: 5.2/2.6mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhanced Semiconductor structure: asymmetric Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2622 Stücke: Lieferzeit 7-14 Tag (e) |
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AON6998 Produktcode: 165965 |
IC > IC Transistoranordnungen |
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| AON6998 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 19A/26A 8-Pin DFN-D EP T/R |
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AON6998 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 19A/26A 8-Pin DFN-D EP T/R |
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AON6998 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 19A/26A DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A, 26A Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs |
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AON6998 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 19A/26A DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A, 26A Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs |
Produkt ist nicht verfügbar |