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AON6528 Alpha & Omega Semiconductor
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Technische Details AON6528 Alpha & Omega Semiconductor
Description: MOSFET N-CHANNEL 30V 30A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1037 pF @ 15 V.
Weitere Produktangebote AON6528
Foto | Bezeichnung | Hersteller | Beschreibung |
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AON6528 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 10W; DFN5x6 Drain-source voltage: 30V Drain current: 23A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET Power dissipation: 10W Polarisation: unipolar Gate charge: 15.5nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DFN5x6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AON6528 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1037 pF @ 15 V |
Produkt ist nicht verfügbar |
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AON6528 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 10W; DFN5x6 Drain-source voltage: 30V Drain current: 23A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET Power dissipation: 10W Polarisation: unipolar Gate charge: 15.5nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DFN5x6 |
Produkt ist nicht verfügbar |