AON6435 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -21.5A; 12.5W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -21.5A
Power dissipation: 12.5W
Case: DFN5x6
Gate-source voltage: ±25V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -21.5A; 12.5W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -21.5A
Power dissipation: 12.5W
Case: DFN5x6
Gate-source voltage: ±25V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1838 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
334+ | 0.21 EUR |
374+ | 0.19 EUR |
394+ | 0.18 EUR |
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Produktbewertung abgeben
Technische Details AON6435 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET P-CH 30V 12A/34A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 34A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V, Power Dissipation (Max): 4.1W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V.
Weitere Produktangebote AON6435 nach Preis ab 0.18 EUR bis 0.21 EUR
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AON6435 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -21.5A; 12.5W; DFN5x6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -21.5A Power dissipation: 12.5W Case: DFN5x6 Gate-source voltage: ±25V On-state resistance: 17mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhanced |
auf Bestellung 1838 Stücke: Lieferzeit 14-21 Tag (e) |
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AON6435 | Hersteller : Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 34A 8-Pin DFN EP T/R |
Produkt ist nicht verfügbar |
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AON6435 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 12A/34A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 4.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V |
Produkt ist nicht verfügbar |
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AON6435 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 12A/34A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 4.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V |
Produkt ist nicht verfügbar |