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AON6262E Alpha & Omega Semiconductor
auf Bestellung 51000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.7 EUR |
6000+ | 0.64 EUR |
9000+ | 0.58 EUR |
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Technische Details AON6262E Alpha & Omega Semiconductor
Description: MOSFET N-CH 60V 40A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V.
Weitere Produktangebote AON6262E nach Preis ab 0.58 EUR bis 1.78 EUR
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AON6262E | Hersteller : Alpha & Omega Semiconductor |
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auf Bestellung 51000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON6262E | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V |
auf Bestellung 5887 Stücke: Lieferzeit 10-14 Tag (e) |
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AON6262E | Hersteller : Alpha & Omega Semiconductor |
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auf Bestellung 51000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON6262E | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AON6262E | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 19W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Power dissipation: 19W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 30nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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AON6262E | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V |
Produkt ist nicht verfügbar |
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AON6262E | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 19W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Power dissipation: 19W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 30nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |