AON4703

AON4703 ALPHA & OMEGA SEMICONDUCTOR


AON4703-DTE.pdf Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.1W; DFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Power dissipation: 1.1W
Case: DFN8
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details AON4703 ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET P-CH 20V 3.4A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-DFN (3x2), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V.

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AON4703 AON4703 Hersteller : Alpha & Omega Semiconductor Inc. AON4703.pdf Description: MOSFET P-CH 20V 3.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Produkt ist nicht verfügbar
AON4703 AON4703 Hersteller : ALPHA & OMEGA SEMICONDUCTOR AON4703-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.1W; DFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Power dissipation: 1.1W
Case: DFN8
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
Produkt ist nicht verfügbar