AON2803 Alpha & Omega Semiconductor
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Technische Details AON2803 Alpha & Omega Semiconductor
Description: MOSFET 2P-CH 20V 3.8A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.8A, Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V, Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-DFN (2x2).
Weitere Produktangebote AON2803
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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AON2803 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; 950mW; DFN6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Power dissipation: 0.95W Case: DFN6 Gate-source voltage: ±8V Mounting: SMD Gate charge: 8.5nC Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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AON2803 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2P-CH 20V 3.8A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) |
Produkt ist nicht verfügbar |
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AON2803 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; 950mW; DFN6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Power dissipation: 0.95W Case: DFN6 Gate-source voltage: ±8V Mounting: SMD Gate charge: 8.5nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |