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AOD7S65 Alpha & Omega Semiconductor
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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2500+ | 0.87 EUR |
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Technische Details AOD7S65 Alpha & Omega Semiconductor
Description: MOSFET N-CH 650V 7A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V.
Weitere Produktangebote AOD7S65 nach Preis ab 0.95 EUR bis 2.5 EUR
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AOD7S65 | Hersteller : Alpha & Omega Semiconductor |
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auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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AOD7S65 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V |
auf Bestellung 2492 Stücke: Lieferzeit 10-14 Tag (e) |
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AOD7S65 | Hersteller : Alpha & Omega Semiconductor |
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auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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AOD7S65 Produktcode: 184626 |
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Produkt ist nicht verfügbar
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AOD7S65 | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AOD7S65 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5A; 89W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 89W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.64Ω Mounting: SMD Gate charge: 9.2nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AOD7S65 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V |
Produkt ist nicht verfügbar |
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AOD7S65 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5A; 89W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 89W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.64Ω Mounting: SMD Gate charge: 9.2nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |