AOD7B65M3 Alpha & Omega Semiconductor
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650V, 7A Alpha IGBT TM With soft and fast recovery anti-parallel diode
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Technische Details AOD7B65M3 Alpha & Omega Semiconductor
Category: SMD IGBT transistors, Description: Transistor: IGBT; 650V; 7A; 28W; TO252; Eoff: 0.099mJ; Eon: 0.108mJ, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 7A, Power dissipation: 28W, Case: TO252, Gate-emitter voltage: ±30V, Pulsed collector current: 21A, Mounting: SMD, Gate charge: 14nC, Kind of package: reel; tape, Turn-on time: 21ns, Turn-off time: 136ns, Collector-emitter saturation voltage: 1.87V, Turn-off switching energy: 0.099mJ, Turn-on switching energy: 0.108mJ, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote AOD7B65M3
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AOD7B65M3 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 650V; 7A; 28W; TO252; Eoff: 0.099mJ; Eon: 0.108mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 7A Power dissipation: 28W Case: TO252 Gate-emitter voltage: ±30V Pulsed collector current: 21A Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Turn-on time: 21ns Turn-off time: 136ns Collector-emitter saturation voltage: 1.87V Turn-off switching energy: 0.099mJ Turn-on switching energy: 0.108mJ Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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AOD7B65M3 | Hersteller : Alpha & Omega Semiconductor Inc. |
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Produkt ist nicht verfügbar |
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AOD7B65M3 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 650V; 7A; 28W; TO252; Eoff: 0.099mJ; Eon: 0.108mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 7A Power dissipation: 28W Case: TO252 Gate-emitter voltage: ±30V Pulsed collector current: 21A Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Turn-on time: 21ns Turn-off time: 136ns Collector-emitter saturation voltage: 1.87V Turn-off switching energy: 0.099mJ Turn-on switching energy: 0.108mJ |
Produkt ist nicht verfügbar |