AOD607

AOD607 Alpha & Omega Semiconductor


aod607.pdf Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N/P-CH 30V 12A 5-Pin(4+Tab) DPAK
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Technische Details AOD607 Alpha & Omega Semiconductor

Description: MOSFET N/P-CH 30V 12A TO252-4L, Packaging: Tape & Reel (TR), Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V, Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252-4L.

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AOD607 AOD607 Hersteller : Alpha & Omega Semiconductor aod607.pdf Trans MOSFET N/P-CH 30V 12A 5-Pin(4+Tab) DPAK
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AOD607 AOD607 Hersteller : Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-4L
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AOD607 AOD607 Hersteller : ALPHA & OMEGA SEMICONDUCTOR AOD607-DTE.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 9.4/-9.4A
Power dissipation: 12.5W
Case: TO252-4
Gate-source voltage: ±20V
On-state resistance: 25/37mΩ
Mounting: SMD
Gate charge: 9.8/9.7nC
Kind of channel: enhanced
Semiconductor structure: common drain
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