AOC3878 ALPHA & OMEGA SEMICONDUCTOR
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Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain
Drain-source voltage: 12V
On-state resistance: 2mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: DFN10
Semiconductor structure: common drain
Anzahl je Verpackung: 1 Stücke
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Technische Details AOC3878 ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain, Drain-source voltage: 12V, On-state resistance: 2mΩ, Type of transistor: N-MOSFET x2, Power dissipation: 3.1W, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Gate charge: 60nC, Kind of channel: enhanced, Gate-source voltage: ±8V, Mounting: SMD, Case: DFN10, Semiconductor structure: common drain, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote AOC3878
Foto | Bezeichnung | Hersteller | Beschreibung |
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AOC3878 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain Drain-source voltage: 12V On-state resistance: 2mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: DFN10 Semiconductor structure: common drain |
Produkt ist nicht verfügbar |