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AOC2806 Alpha & Omega Semiconductor Inc.
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Description: MOSFET 2N-CH 20V 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Supplier Device Package: 4-DFN (1.7x1.7)
auf Bestellung 391 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
18+ | 0.99 EUR |
21+ | 0.86 EUR |
100+ | 0.59 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AOC2806 Alpha & Omega Semiconductor Inc.
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.5A; 700mW; DFN4, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 4.5A, Power dissipation: 0.7W, Case: DFN4, Gate-source voltage: ±12V, On-state resistance: 18mΩ, Mounting: SMD, Gate charge: 12.5nC, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote AOC2806
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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AOC2806 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.5A; 700mW; DFN4 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.5A Power dissipation: 0.7W Case: DFN4 Gate-source voltage: ±12V On-state resistance: 18mΩ Mounting: SMD Gate charge: 12.5nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AOC2806 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V Supplier Device Package: 4-DFN (1.7x1.7) |
Produkt ist nicht verfügbar |
|
AOC2806 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.5A; 700mW; DFN4 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.5A Power dissipation: 0.7W Case: DFN4 Gate-source voltage: ±12V On-state resistance: 18mΩ Mounting: SMD Gate charge: 12.5nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |