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AOC2421 Alpha & Omega Semiconductor
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Technische Details AOC2421 Alpha & Omega Semiconductor
Description: MOSFET P-CH 8V 2.5A 4ALPHADFN, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 62mOhm @ 1.5A, 2.5V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 700mV @ 250µA, Supplier Device Package: 4-AlphaDFN (0.97x0.97), Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 752 pF @ 4 V.
Weitere Produktangebote AOC2421
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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AOC2421 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -8V; -2.5A; 600mW; DFN4 Mounting: SMD Case: DFN4 Polarisation: unipolar Gate charge: 7.5nC Kind of channel: enhanced Gate-source voltage: ±5V Power dissipation: 0.6W Drain-source voltage: -8V Drain current: -2.5A On-state resistance: 62mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AOC2421 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 1.5A, 2.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 4-AlphaDFN (0.97x0.97) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 752 pF @ 4 V |
Produkt ist nicht verfügbar |
|
AOC2421 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -8V; -2.5A; 600mW; DFN4 Mounting: SMD Case: DFN4 Polarisation: unipolar Gate charge: 7.5nC Kind of channel: enhanced Gate-source voltage: ±5V Power dissipation: 0.6W Drain-source voltage: -8V Drain current: -2.5A On-state resistance: 62mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |