AOB66914L Alpha & Omega Semiconductor Inc.


AOB66914L.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 6V
Power Dissipation (Max): 10W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V
auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+6.93 EUR
Mindestbestellmenge: 800
Produktrezensionen
Produktbewertung abgeben

Technische Details AOB66914L Alpha & Omega Semiconductor Inc.

Description: N, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 120A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 6V, Power Dissipation (Max): 10W (Ta), 375W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V.

Weitere Produktangebote AOB66914L nach Preis ab 7.6 EUR bis 10.63 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
AOB66914L Hersteller : Alpha & Omega Semiconductor Inc. AOB66914L.pdf Description: N
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 6V
Power Dissipation (Max): 10W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.63 EUR
10+ 9.62 EUR
25+ 9.17 EUR
100+ 7.96 EUR
250+ 7.6 EUR
Mindestbestellmenge: 2
AOB66914L Hersteller : Alpha & Omega Semiconductor aob66914l.pdf N Channel Trench Power MOSFET
Produkt ist nicht verfügbar