AOB66616L ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 50W; TO263
Mounting: SMD
Case: TO263
Drain-source voltage: 60V
Drain current: 95A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 42.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 62+ | 1.16 EUR |
| 71+ | 1.02 EUR |
| 73+ | 0.97 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AOB66616L ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 60V 38.5A/140A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 140A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V, Power Dissipation (Max): 8.3W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V.
Weitere Produktangebote AOB66616L nach Preis ab 0.79 EUR bis 3.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
AOB66616L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 50W; TO263 Mounting: SMD Case: TO263 Drain-source voltage: 60V Drain current: 95A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 42.5nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 73 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||
 |
AOB66616L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 41600 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
AOB66616L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 41600 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
AOB66616L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
AOB66616L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 38.5A/140A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V |
auf Bestellung 790 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
AOB66616L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||
|
|
AOB66616L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
|
|
AOB66616L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 38.5A/140A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V |
Produkt ist nicht verfügbar |