![AOB409L AOB409L](https://static6.arrow.com/aropdfconversion/arrowimages/82e0c9bb9740958b0a42caa527634fc9eb79854/to-263.jpg)
AOB409L Alpha & Omega Semiconductor
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 0.9 EUR |
1600+ | 0.7 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AOB409L Alpha & Omega Semiconductor
Description: MOSFET P-CH 60V 5A/31.5A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 31.5A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 83.3W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 30 V.
Weitere Produktangebote AOB409L nach Preis ab 0.7 EUR bis 1.43 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
AOB409L | Hersteller : Alpha & Omega Semiconductor |
![]() |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
AOB409L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -22A; 1.3W; TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -22A Power dissipation: 1.3W Case: TO263 Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 19.7nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 231 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
AOB409L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -22A; 1.3W; TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -22A Power dissipation: 1.3W Case: TO263 Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 19.7nC Kind of channel: enhanced |
auf Bestellung 231 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
AOB409L | Hersteller : Alpha & Omega Semiconductor |
![]() |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
![]() |
AOB409L | Hersteller : Alpha & Omega Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
AOB409L | Hersteller : Alpha & Omega Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
AOB409L | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 31.5A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 83.3W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 30 V |
Produkt ist nicht verfügbar |