AOB282L Alpha & Omega Semiconductor
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Technische Details AOB282L Alpha & Omega Semiconductor
Description: MOSFET N-CH 80V 18.5A/105A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 105A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 272.5W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7765 pF @ 40 V.
Weitere Produktangebote AOB282L
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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AOB282L | Hersteller : Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 105A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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AOB282L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 136W; TO263 Mounting: SMD Power dissipation: 136W Polarisation: unipolar Gate charge: 58nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 80V Drain current: 82A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AOB282L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 80V 18.5A/105A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 272.5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7765 pF @ 40 V |
Produkt ist nicht verfügbar |
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AOB282L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 136W; TO263 Mounting: SMD Power dissipation: 136W Polarisation: unipolar Gate charge: 58nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 80V Drain current: 82A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |