![AOB280L AOB280L](https://ce8dc832c.cloudimg.io/v7/_cdn_/82/FC/00/00/1/53032_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=c8062f37b7a85af3240469ff81f8399c8a2cc901)
AOB280L ALPHA & OMEGA SEMICONDUCTOR
![AOB280L.pdf](/images/adobe-acrobat.png)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 166.5W; TO263
Mounting: SMD
Case: TO263
Drain-source voltage: 80V
Drain current: 110A
On-state resistance: 2.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 166.5W
Polarisation: unipolar
Gate charge: 160nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 610 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
18+ | 4 EUR |
21+ | 3.55 EUR |
24+ | 3.1 EUR |
25+ | 2.93 EUR |
800+ | 2.83 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AOB280L ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 80V 20.5A/140A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 140A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11135 pF @ 40 V.
Weitere Produktangebote AOB280L nach Preis ab 2.93 EUR bis 4 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
AOB280L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 166.5W; TO263 Mounting: SMD Case: TO263 Drain-source voltage: 80V Drain current: 110A On-state resistance: 2.2mΩ Type of transistor: N-MOSFET Power dissipation: 166.5W Polarisation: unipolar Gate charge: 160nC Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 610 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
AOB280L | Hersteller : Alpha & Omega Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
AOB280L | Hersteller : Alpha & Omega Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
AOB280L | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11135 pF @ 40 V |
Produkt ist nicht verfügbar |