AOB11S65L ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 198W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 198W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.11Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 198W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 198W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.11Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 771 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
28+ | 2.57 EUR |
32+ | 2.27 EUR |
37+ | 1.97 EUR |
39+ | 1.86 EUR |
500+ | 1.79 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AOB11S65L ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 650V 11A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V, Power Dissipation (Max): 198W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V.
Weitere Produktangebote AOB11S65L nach Preis ab 1.79 EUR bis 2.57 EUR
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AOB11S65L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 198W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 198W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.11Ω Mounting: SMD Gate charge: 13.2nC Kind of channel: enhanced |
auf Bestellung 771 Stücke: Lieferzeit 14-21 Tag (e) |
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AOB11S65L | Hersteller : Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 11A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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AOB11S65L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 650V 11A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V Power Dissipation (Max): 198W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V |
Produkt ist nicht verfügbar |
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AOB11S65L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 650V 11A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V Power Dissipation (Max): 198W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V |
Produkt ist nicht verfügbar |