Technische Details AO4932 AO
Description: MOSFET 2N-CH 30V 11A/8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11A, 8A, Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote AO4932
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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AO4932 | Hersteller : AO |
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auf Bestellung 80000 Stücke: Lieferzeit 21-28 Tag (e) |
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AO4932 | Hersteller : AOS |
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auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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AO4932 | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AO4932 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A, 8A Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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AO4932 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A, 8A Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |