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AO4447A Alpha & Omega Semiconductor
auf Bestellung 51000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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3000+ | 0.52 EUR |
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Technische Details AO4447A Alpha & Omega Semiconductor
Description: MOSFET P-CH 30V 17A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V.
Weitere Produktangebote AO4447A nach Preis ab 0.46 EUR bis 1.47 EUR
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AO4447A | Hersteller : Alpha & Omega Semiconductor |
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auf Bestellung 51000 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4447A | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SOIC Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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AO4447A | Hersteller : Alpha & Omega Semiconductor |
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auf Bestellung 197 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4447A | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -13A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 41nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3171 Stücke: Lieferzeit 7-14 Tag (e) |
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AO4447A | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -13A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 41nC Kind of channel: enhanced |
auf Bestellung 3171 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4447A | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SOIC Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V |
auf Bestellung 45943 Stücke: Lieferzeit 10-14 Tag (e) |
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AO4447A | Hersteller : Alpha & Omega Semiconductor |
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auf Bestellung 197 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4447A | Hersteller : ALPHA&OMEGA |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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AO4447A |
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auf Bestellung 88000 Stücke: Lieferzeit 18-25 Tag (e) |
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AO4447A | Hersteller : Alpha & Omega Semiconductor |
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