
AO3409 Alpha & Omega Semiconductor
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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3000+ | 0.08 EUR |
6000+ | 0.07 EUR |
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Technische Details AO3409 Alpha & Omega Semiconductor
Description: MOSFET P-CH 30V 2.6A SOT23-3L, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, SOT-23-3 Variant, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V.
Weitere Produktangebote AO3409 nach Preis ab 0.06 EUR bis 0.69 EUR
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AO3409 | Hersteller : Alpha & Omega Semiconductor |
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auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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AO3409 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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AO3409 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1W; SOT23 Drain current: -2.2A On-state resistance: 0.11Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 2.2nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SOT23 Drain-source voltage: -30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1263 Stücke: Lieferzeit 7-14 Tag (e) |
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AO3409 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1W; SOT23 Drain current: -2.2A On-state resistance: 0.11Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 2.2nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SOT23 Drain-source voltage: -30V |
auf Bestellung 1263 Stücke: Lieferzeit 14-21 Tag (e) |
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AO3409 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V |
auf Bestellung 13206 Stücke: Lieferzeit 10-14 Tag (e) |
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AO3409 | Hersteller : Alpha & Omega Semiconductor |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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AO3409 | Hersteller : ALPHA&OMEGA |
![]() Anzahl je Verpackung: 100 Stücke |
auf Bestellung 235 Stücke: Lieferzeit 7-14 Tag (e) |
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AO3409 Produktcode: 181369
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