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| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 15.79 EUR |
| 10+ | 14.29 EUR |
| 50+ | 13.6 EUR |
| 100+ | 11.81 EUR |
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Technische Details ALD1102BPAL Advanced Linear Devices
Description: MOSFET 2P-CH 10.6V 8DIP, Packaging: Tube, Package / Case: 8-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Configuration: 2 P-Channel (Dual) Matched Pair, Operating Temperature: 0°C ~ 70°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 10.6V, Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V, Rds On (Max) @ Id, Vgs: 270Ohm @ 5V, Vgs(th) (Max) @ Id: 1.2V @ 10µA, Supplier Device Package: 8-PDIP, Part Status: Active.
Weitere Produktangebote ALD1102BPAL
| Foto | Bezeichnung | Hersteller | Beschreibung |
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ALD1102BPAL | Hersteller : Advanced Linear Devices Inc. |
 Description: MOSFET 2P-CH 10.6V 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 P-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Rds On (Max) @ Id, Vgs: 270Ohm @ 5V Vgs(th) (Max) @ Id: 1.2V @ 10µA Supplier Device Package: 8-PDIP Part Status: Active |
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