AIMZH120R020M1TXKSA1 Infineon Technologies

Description: SIC_DISCRETE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V, Power Dissipation (Max): 429W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 13.7mA, Supplier Device Package: PG-TO247-4-11, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V, Qualification: AEC-Q101.