AIMZA75R140M1HXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
Description: IGBT
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.82 EUR |
30+ | 7.84 EUR |
120+ | 7.01 EUR |
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Technische Details AIMZA75R140M1HXKSA1 Infineon Technologies
Description: IGBT, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tj), Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 1.7mA, Supplier Device Package: PG-TO247-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMZA75R140M1HXKSA1 nach Preis ab 5.49 EUR bis 10.17 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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AIMZA75R140M1HXKSA1 | Hersteller : Infineon Technologies | SiC MOSFETs Y |
auf Bestellung 194 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMZA75R140M1HXKSA1 | Hersteller : Infineon Technologies | AUTOMOTIVE_SICMOS |
Produkt ist nicht verfügbar |