AFGB30T65SQDN onsemi
Hersteller: onsemiIGBT Transistors IGBT 650V FS4 High speed version for OBC application in D2PAK 650V, 30A, D2PAK
auf Bestellung 1574 Stücke:
Lieferzeit 178-182 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.39 EUR |
| 10+ | 6.21 EUR |
| 25+ | 5.88 EUR |
| 100+ | 5.03 EUR |
| 250+ | 4.75 EUR |
| 500+ | 4.47 EUR |
| 800+ | 3.84 EUR |
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Technische Details AFGB30T65SQDN onsemi
Description: 650V/30A FS4 IGBT TO263 A, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 245 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 14.5ns/63.2ns, Test Condition: 400V, 30A, 6Ohm, 15V, Gate Charge: 56 nC, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 220 W, Qualification: AEC-Q101.
Weitere Produktangebote AFGB30T65SQDN
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| AFGB30T65SQDN | Hersteller : ON Semiconductor |
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auf Bestellung 725 Stücke: Lieferzeit 21-28 Tag (e) |
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AFGB30T65SQDN | Hersteller : ON Semiconductor |
650 V 30 A IGBT Chip Transistor |
Produkt ist nicht verfügbar |
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AFGB30T65SQDN | Hersteller : ONSEMI |
Description: ONSEMI - AFGB30T65SQDN - IGBT, 60 A, 1.6 V, 220 W, 650 V, TO-263AB (D2PAK), 3 Pin(s) Transistormontage: Oberflächenmontage Kollektor-Emitter-Sättigungsspannung: 1.6 MSL: MSL 1 - unbegrenzt Verlustleistung: 220 Bauform - Transistor: TO-263AB (D2PAK) Anzahl der Pins: 3 Produktpalette: - Kollektor-Emitter-Spannung, max.: 650 Betriebstemperatur, max.: 175 Kontinuierlicher Kollektorstrom: 60 SVHC: Lead (10-Jun-2022) |
Produkt ist nicht verfügbar |
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AFGB30T65SQDN | Hersteller : onsemi |
Description: 650V/30A FS4 IGBT TO263 A Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 245 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 14.5ns/63.2ns Test Condition: 400V, 30A, 6Ohm, 15V Gate Charge: 56 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 220 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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AFGB30T65SQDN | Hersteller : onsemi |
Description: 650V/30A FS4 IGBT TO263 A Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 245 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 14.5ns/63.2ns Test Condition: 400V, 30A, 6Ohm, 15V Gate Charge: 56 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 220 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |