A3I25X050GNR1 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 28V OM400G-8
Packaging: Tape & Reel (TR)
Package / Case: OM-400G-8
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
Configuration: 2 N-Channel
Power - Output: 5.6W
Technology: LDMOS (Dual)
Supplier Device Package: OM-400G-8
Part Status: Active
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 130 mA
Gain: 28.8dB
Description: RF MOSFET LDMOS 28V OM400G-8
Packaging: Tape & Reel (TR)
Package / Case: OM-400G-8
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
Configuration: 2 N-Channel
Power - Output: 5.6W
Technology: LDMOS (Dual)
Supplier Device Package: OM-400G-8
Part Status: Active
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 130 mA
Gain: 28.8dB
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Technische Details A3I25X050GNR1 NXP USA Inc.
Description: RF MOSFET LDMOS 28V OM400G-8, Packaging: Tape & Reel (TR), Package / Case: OM-400G-8, Current Rating (Amps): 10µA, Mounting Type: Surface Mount, Frequency: 2.3GHz ~ 2.7GHz, Configuration: 2 N-Channel, Power - Output: 5.6W, Technology: LDMOS (Dual), Supplier Device Package: OM-400G-8, Part Status: Active, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 130 mA, Gain: 28.8dB.
Weitere Produktangebote A3I25X050GNR1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
A3I25X050GNR1 | Hersteller : NXP Semiconductors | RF Amplifier Airfast RF LDMOS Integrated Power Amplifier, 2300-2700 MHz, 5.6 W Avg., 28 V |
Produkt ist nicht verfügbar |