A2V07H525-04NR6 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 48V OM1230-4
Packaging: Tape & Reel (TR)
Package / Case: OM-1230-4L
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 595MHz ~ 851MHz
Power - Output: 120W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: OM-1230-4L
Part Status: Active
Voltage - Rated: 105 V
Voltage - Test: 48 V
Current - Test: 700 mA
Description: RF MOSFET LDMOS 48V OM1230-4
Packaging: Tape & Reel (TR)
Package / Case: OM-1230-4L
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 595MHz ~ 851MHz
Power - Output: 120W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: OM-1230-4L
Part Status: Active
Voltage - Rated: 105 V
Voltage - Test: 48 V
Current - Test: 700 mA
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Technische Details A2V07H525-04NR6 NXP USA Inc.
Description: RF MOSFET LDMOS 48V OM1230-4, Packaging: Tape & Reel (TR), Package / Case: OM-1230-4L, Current Rating (Amps): 10µA, Mounting Type: Surface Mount, Frequency: 595MHz ~ 851MHz, Power - Output: 120W, Gain: 17.5dB, Technology: LDMOS, Supplier Device Package: OM-1230-4L, Part Status: Active, Voltage - Rated: 105 V, Voltage - Test: 48 V, Current - Test: 700 mA.
Weitere Produktangebote A2V07H525-04NR6
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
A2V07H525-04NR6 | Hersteller : NXP Semiconductors | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 595-851 MHz, 120 W Avg., 48 V |
Produkt ist nicht verfügbar |